| 摘要 |
FIELD: physics.SUBSTANCE: solid-state imaging device includes a pixel array in which there are plurality of unit cells for forming a plurality of rows and a plurality of columns, wherein each of the plurality of unit cells includes a pixel, each pixel having a photoelectric conversion element and a pixel reading circuit inside, which outputs a signal which corresponds charges generated in the photoelectric conversion element; the plurality of unit cells are powered through a power supply line and an earthing line, and at least one of the plurality of unit cells includes at least part of a capacitive element, having a first electrode which is connected to the power supply line and a second electrode which is connected to the earthing line.EFFECT: preventing deterioration of image quality caused by changes in potential of the power supply line and the earthing line.6 cl, 12 dwg |
