发明名称 |
SEMICONDUCTOR DEVICES WITH FIELD PLATES |
摘要 |
A III-N device is described with a III-N material layer, an insulator layer on a surface of the III-N material layer, an etch stop layer on an opposite side of the insulator layer from the III-N material layer, and an electrode defining layer on an opposite side of the etch stop layer from the insulator layer. A recess is formed in the electrode defining layer. An electrode is formed in the recess. The insulator can have a precisely controlled thickness, particularly between the electrode and III-N material layer. |
申请公布号 |
EP2471100(A4) |
申请公布日期 |
2013.04.10 |
申请号 |
EP20100815813 |
申请日期 |
2010.08.20 |
申请人 |
TRANSPHORM INC. |
发明人 |
CHU, RONGMING;COFFIE, ROBERT |
分类号 |
H01L29/778;H01L21/285;H01L21/336;H01L29/20;H01L29/40;H01L29/423;H01L29/51;H01L29/872 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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