| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a bonded wafer which is inexpensive and excels in productivity without complicating polishing work, and can easily control the thickness of an active layer in a desired standard. <P>SOLUTION: This method of manufacturing a bonded wafer includes: a process (S1) of bonding a supporting wafer to a wafer for an active layer to form a bonded body; a process (S2) of processing the side of the wafer for an active layer of the bonded body to form an active layer having a first thickness; a process (S3) of sticking, to a polishing plate, a plurality of the bonded bodies each having the active layer formed thereon to polish the active layers to a second thickness; a process (S4) of optically measuring the second thickness in a state where the polished bonded bodies are stuck to the polishing plate; and a process (S5) of re-polishing the active layers to a third thickness based on the measured second thickness. <P>COPYRIGHT: (C)2011,JPO&INPIT |
