发明名称 |
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>A TFT 20 includes a gate electrode 21, a gate insulating film 22, a semiconductor layer 23, a source electrode 24, a drain electrode 25, etc. The semiconductor layer 23 is comprised of a metal oxide semiconductor (IGZO), and has a source portion 23a that contacts the source electrode 24, a drain electrode 23b that contacts the drain electrode 25, and a channel portion 23c that is located between the source and drain portions 23a, 23b. A reduced region 30 is formed at least in the channel portion 23c of the semiconductor layer 23, and the reduced region 30 has a higher content of a simple substance of a metal such as In than the remaining portion of the semiconductor layer 23.</p> |
申请公布号 |
EP2579316(A1) |
申请公布日期 |
2013.04.10 |
申请号 |
EP20110789404 |
申请日期 |
2011.05.23 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MORIGUCHI, MASAO;TAKEI, MICHIKO;KANZAKI, YOHSUKE;INOUE, TSUYOSHI;FUKAYA, TETSUO;TAKANISHI, YUDAI;KUSUMI, TAKATSUGU;NAKATANI, YOSHIKI;OKAMOTO, TETSUYA;NAKANISHI, KENJI |
分类号 |
H01L29/786;H01L29/24;H01L29/66 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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