THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

摘要

Each TFT (5a) includes a gate electrode (11a) provided on a substrate (10), a gate insulating film (12) provided so as to cover the gate electrode (11a), a semiconductor layer (13a) comprised of an oxide semiconductor and having a channel region (C) provided on the gate insulating film (12) so as to overlap the gate electrode (11a), and a source electrode (15aa) and a drain electrode (15b) which are provided on the semiconductor layer (13a) so as to be separated from each other with the channel region (C) interposed therebetween. Each of the auxiliary capacitors (6a) includes a capacitor line (11b) comprised of the same material as the gate electrode (11a) and provided in the same layer as the gate electrode (11a), the gate insulating film (12) provided so as to cover the capacitor line (11a), a capacitor intermediate layer (13c) provided using the oxide semiconductor and provided on the gate insulating film (12) so as to overlap the capacitor line (11b), and a capacitor electrode (15b) provided on the capacitor intermediate layer (13c), and the capacitor intermediate layer (13c) is conductive.