发明名称 Gate insulator layer for electronic devices
摘要 Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such polycycloolefin gate insulator layers and electronic devices.
申请公布号 GB201303582(D0) 申请公布日期 2013.04.10
申请号 GB20130003582 申请日期 2011.08.26
申请人 MERCK PATENT GMBH 发明人
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