| 摘要 |
A magnetoresistive bridge nonvolatile memory device having a flat, continuous folded closed magnetic loop, the magnetic loop having a side for holding four sense metal terminated magnetic shunts, and four planar central parallel rectangular giant magnetoresistive GMR resistors, each of the four central parallel rectangular giant magnetoresistive GMR resistors being located on the side of the continuous folded closed magnetic loop between each of two of the sense metal terminated magnetic shunts, each two of the four sense metal terminated magnetic shunts electrically connected to adjacent ends of a central parallel rectangular giant magnetoresistive GMR resistor.
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