| 摘要 |
A semiconductor device (1) includes a wiring (10) and dummy conductor patterns (20). The wiring (10) is a wiring through which a current with a frequency of 5 GHz or higher flows. Near the wiring (10), the dummy conductor patterns (20) are formed. A planar shape of each of the dummy conductor patterns (20) is equivalent to a shape with an internal angle larger than 180°. |
