发明名称 |
Lateral insulated gate bipolar transistor (LIGBT) |
摘要 |
This invention generally relates to LIGBTs, ICs comprising an LIGBT and methods of forming an LIGBT, and more particularly to an LIGBT comprising a substrate region of first conductivity type and peak dopant concentration less than about 1×1017/cm3; a lateral drift region of a second, opposite conductivity type adjacent the substrate region and electrically coupled to said substrate region; a charge injection region of the first conductivity type to inject charge toward said lateral drift region; a gate to control flow of said charge in said lateral drift region; metal enriched adhesive below said substrate region; and an intermediate layer below said substrate region to substantially suppress charge injection into said substrate region from said metal enriched adhesive. |
申请公布号 |
US8415712(B2) |
申请公布日期 |
2013.04.09 |
申请号 |
US20090648847 |
申请日期 |
2009.12.29 |
申请人 |
UDREA FLORIN;PATHIRANA VASANTHA;TRAJKOVIC TANYA;UDUGAMPOLA NISHAD;CAMBRIDGE SEMICONDUCTOR LIMITED |
发明人 |
UDREA FLORIN;PATHIRANA VASANTHA;TRAJKOVIC TANYA;UDUGAMPOLA NISHAD |
分类号 |
H01L29/739;H01L21/331 |
主分类号 |
H01L29/739 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|