发明名称 |
Phase change memory cell having top and bottom sidewall contacts |
摘要 |
Memory devices and methods for manufacturing are described herein. A memory device as described herein includes a memory element and a first electrode having an inner surface surrounding the memory element to contact the memory element at a first contact surface. The device includes a second electrode spaced away from the first electrode, the second electrode having an inner surface surrounding the memory element to contact the memory element at a second contact surface. |
申请公布号 |
US8415651(B2) |
申请公布日期 |
2013.04.09 |
申请号 |
US20080138311 |
申请日期 |
2008.06.12 |
申请人 |
LUNG HSIANG-LAN;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG-LAN |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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