| 摘要 |
A solid-state imaging device 1 is provided with a plurality of photoelectric converting portions 3, a plurality of first transferring portions 5, a plurality of charge accumulating portions 7, a plurality of second transferring portions 9, and a shift register 11. Each photoelectric converting portion 3 has a photosensitive region 13 which has a planar shape of a nearly rectangular shape composed of two long sides and two short sides, and a potential gradient forming region 15 which forms a potential gradient increasing along a first direction directed from one short side to the other short side forming the planar shape of the photosensitive region 13. Bach first transferring portion 5 is arranged on the side of the other short side forming the planar shape of the corresponding photosensitive region 13 and transfers a charge acquired from the corresponding photosensitive region 13, in the first direction. Each charge accumulating portion 7 accumulates a charge transferred from the corresponding first transferring portion 5. This achieves the solid-state imaging device capable of quickly reading out the charge generated in the photosensitive region, without complicating image processing. |
