| 摘要 |
<p>PURPOSE: A power semiconductor device is provided to improve the current density of a gate electrode by including a metal layer and a gate insulation layer with a second insulation region. CONSTITUTION: A gate insulation layer(120) has a first insulation region and a second insulation region. A gate electrode(130) has a first electrode region and a second electrode region. A metal layer(140) is formed on the upper side of the gate electrode. A second conductive body region(150) is formed on a first surface of a first conductive drift region(112). A first conductive well region(160) is formed in the second conductive body region.</p> |
