发明名称 |
Substrate processing apparatus, semiconductor device manufacturing method and temperature controlling method |
摘要 |
Provided are a substrate processing apparatus, a semiconductor device manufacturing method, and a temperature controlling method, which are adapted to improve equipment operational rate. A calculation parameter computing unit computes a calculation parameter using at least a first calculation parameter correction value determined by a first calculation parameter setting unit based on an accumulated film thickness on a reaction vessel, a second calculation parameter correction value determined by a second calculation parameter setting unit based on an accumulated film thickness on a filler wafer, and a third calculation parameter correction value determined by a third calculation parameter setting unit based on the number of filler wafers. Product and filler wafers are accommodated and heat-treated in the reaction vessel while controlling a heating unit using calculation results obtained using at least the calculation parameter and deviation between a set temperature and a temperature detected in the heating unit by a temperature detector. |
申请公布号 |
US8417394(B2) |
申请公布日期 |
2013.04.09 |
申请号 |
US20090609541 |
申请日期 |
2009.10.30 |
申请人 |
SUGISHITA MASASHI;UENO MASAAKI;IIDA TSUKASA;NISHIURA SUSUMU;AOYAMA MASAO;FUJIMOTO KENICHI;NAKAGAWA YOSHIHIKO;MITSUI HIROYUKI;HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
SUGISHITA MASASHI;UENO MASAAKI;IIDA TSUKASA;NISHIURA SUSUMU;AOYAMA MASAO;FUJIMOTO KENICHI;NAKAGAWA YOSHIHIKO;MITSUI HIROYUKI |
分类号 |
H01L21/67 |
主分类号 |
H01L21/67 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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