发明名称 |
Method to reduce contact resistance of N-channel transistors by using a III-V semiconductor interlayer in source and drain |
摘要 |
A method to reduce contact resistance of n-channel transistors by using a III-V semiconductor interlayer in source and drain is generally presented. In this regard, a device is introduced comprising an n-type transistor with a source region and a drain region a first interlayer dielectric layer adjacent the transistor, a trench through the first interlayer dielectric layer to the source region, and a conductive source contact in the trench, the source contact being separated from the source region by a III-V semiconductor interlayer. Other embodiments are also disclosed and claimed. |
申请公布号 |
US8415751(B2) |
申请公布日期 |
2013.04.09 |
申请号 |
US20100982083 |
申请日期 |
2010.12.30 |
申请人 |
MUKHERJEE NILOY;DEWEY GILBERT;RADOSAVLJEVIC MARKO;CHAU ROBERT S.;METZ MATTHEW V.;INTEL CORPORATION |
发明人 |
MUKHERJEE NILOY;DEWEY GILBERT;RADOSAVLJEVIC MARKO;CHAU ROBERT S.;METZ MATTHEW V. |
分类号 |
H01L29/78;H01L21/203;H01L21/205 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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