发明名称 Method for fabricating a structure for a microelectric device
摘要 A method and system for fabricating a microelectric device are described. A write pole of an energy assisted magnetic recording head or a capacitor might be fabricated. The method includes depositing a resist film and curing the resist film at a temperature of at least 180 degrees centigrade. A cured resist film capable of supporting a line having an aspect ratio of at least ten is thus provided. A portion of the cured resist film is removed. A remaining portion of the resist film forms the line. An insulating or nonmagnetic layer is deposited after formation of the line. The line is removed to provide a trench in the insulating or nonmagnetic layer. The trench has a height and a width. The height divided by the width corresponds to the aspect ratio. At least part of the structure is provided in the trench.
申请公布号 US8413317(B1) 申请公布日期 2013.04.09
申请号 US20100945681 申请日期 2010.11.12
申请人 WAN DUJIANG;SUN HAI;YI GE;GAO WEI;ZHANG HONG;LUO GUANGHONG;TANG YUNJUN;JIANG TIFFANY YUN WEN;ZHOU ZHIGANG;SU WENCHENG;WESTERN DIGITAL (FREMONT), LLC 发明人 WAN DUJIANG;SUN HAI;YI GE;GAO WEI;ZHANG HONG;LUO GUANGHONG;TANG YUNJUN;JIANG TIFFANY YUN WEN;ZHOU ZHIGANG;SU WENCHENG
分类号 G11B5/127;H04R31/00 主分类号 G11B5/127
代理机构 代理人
主权项
地址