| 摘要 |
A method of determining the thickness of a conductive film is disclosed. The method employs measured voltage and current responses that have been temperature-compensated to determine the thickness of the conductive film. The temperature compensation uses a temperature compensation factor obtained from a calibration substrate different from the target substrate on which the conductive film being measured is disposed. The calibration substrate has a conductive film formed of a conductive material that is substantially similar to the conductive material of the target substrate. |
