| 摘要 |
A nonvolatile memory cell is constructed using a floating-gate pFET readout transistor having its source tied to a power source (Vdd) and its drain providing a current, which can be sensed to determine the state of the cell. The gate of the pFET readout transistor provides for charge storage, which can be used to represent information such as binary bits. A control capacitor coupled between a first voltage source and the floating gate and a tunneling capacitor between a second voltage source and the floating gate are fabricated so that the control capacitor has much more capacitance than the tunneling capacitor. Manipulation of the voltages applied to the first voltage source and second voltage source controls an electric field across the capacitor structure and pFET dielectrics and thus Fowler-Nordheim tunneling of electrons on and off the floating gate, controlling the charge on the floating gate and the information stored thereon. |
