发明名称 |
Memristors with a switching layer comprising a composite of multiple phases |
摘要 |
A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed. |
申请公布号 |
US8415652(B2) |
申请公布日期 |
2013.04.09 |
申请号 |
US20100819763 |
申请日期 |
2010.06.21 |
申请人 |
YANG JIANHUA;RIBEIRO GILBERTO;WILLIAMS R. STANLEY;HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
YANG JIANHUA;RIBEIRO GILBERTO;WILLIAMS R. STANLEY |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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