发明名称 Magnetic stack having assist layer
摘要 A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.
申请公布号 US8416620(B2) 申请公布日期 2013.04.09
申请号 US20100943976 申请日期 2010.11.11
申请人 ZHENG YUANKAI;GAO ZHENG;JUNG WONJOON;FENG XUEBING;LOU XIAOHUA;XI HAIWEN;SEAGATE TECHNOLOGY LLC 发明人 ZHENG YUANKAI;GAO ZHENG;JUNG WONJOON;FENG XUEBING;LOU XIAOHUA;XI HAIWEN
分类号 G11C11/15 主分类号 G11C11/15
代理机构 代理人
主权项
地址