发明名称 |
Method and composition for chemical mechanical planarization of a metal |
摘要 |
A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing.
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申请公布号 |
US8414789(B2) |
申请公布日期 |
2013.04.09 |
申请号 |
US20090632111 |
申请日期 |
2009.12.07 |
申请人 |
SHI XIAOBO;PALMER BENTLEY J.;SAWAYDA REBECCA A.;CODER FADI ABDALLAH;PEREZ VICTORIA;AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
SHI XIAOBO;PALMER BENTLEY J.;SAWAYDA REBECCA A.;CODER FADI ABDALLAH;PEREZ VICTORIA |
分类号 |
C03C15/00 |
主分类号 |
C03C15/00 |
代理机构 |
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代理人 |
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