| 摘要 |
A nano-imprint lithography stack includes a nano-imprint lithography substrate, a non-silicon-containing layer solidified from a first polymerizable, non-silicon-containing composition, and a silicon-containing layer solidified from a polymerizable silicon-containing composition adhered to a surface of the non-silicon-containing layer. The non-silicon-containing layer is adhered directly or through one or more intervening layers to the nano-imprint lithography substrate. The silicon-containing layer includes a silsesquioxane with a general formula (R′(4-2z)SiOz)x(HOSiO1.5)y, wherein R′ is a hydrocarbon group or two or more different hydrocarbon groups other than methyl, 1<z<2, and x and y are integers. The imprint lithography stack may further include a second non-silicon-containing layer solidified from a second polymerizable, non-silicon-containing composition adhered to a surface of the silicon-containing layer such that the silicon-containing layer is sandwiched between the non-silicon-containing layers. |
