发明名称 METHOD OF FORMING CONNECTION BUMP OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for forming a connection bump of a semiconductor device is provided to prevent a defect due to a flatness problem by positioning the uppermost surfaces of a connection bump and a dummy connection bump with the same level. CONSTITUTION: A photoresist pattern(120) with open patterns is formed. Pillar layers(114) are formed in the open patterns by a first electroplating process. A solder layer(116) is formed on the pillar layers by a second electroplating process. The photoresist pattern is removed. A reflow process is performed on a semiconductor substrate(100) to form a breakdown solder layer and a solder bump.
申请公布号 KR20130035619(A) 申请公布日期 2013.04.09
申请号 KR20110100032 申请日期 2011.09.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, MOON GI;LIM, HWAN SIK;PARK, SUN HEE
分类号 H01L21/60;H01L23/48 主分类号 H01L21/60
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