摘要 |
<p>PURPOSE: A photoacid generator is provided to improve miscibility with a photoresist polymer and to control acid diffusion in a photoresist composition, thereby providing a photoresist with excellent lithography. CONSTITUTION: A compound is represented by chemical formula 1:[A-(CHR^1)_p]_k-(L)-(CH_2)_m-(C(R^2)_2)_n-SO_3^-Z^+. In the chemical formual 1, A is a substituted or unsubstituted monocyclic, polycyclic, or fused polyclinic cycloaliphatic group with more than 5 carbons; R^1 is H, a single bond, or a substituted or unsubstituted C1-30 alkyl group; R^2 is H, F, or C1-4 fluoroalkyl; Z is an organic or inorganic cation; p is an integer from 0-10; k is 1 or 2; m is an integer from 0 or more; and n is an integer from 1 or more. A photoresist composition includes an acid-sensitive polymer and the compound.</p> |