发明名称 |
Micro device transfer head with silicon electrode |
摘要 |
A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.
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申请公布号 |
US8415771(B1) |
申请公布日期 |
2013.04.09 |
申请号 |
US201213481592 |
申请日期 |
2012.05.25 |
申请人 |
GOLDA DARIUSZ;BIBL ANDREAS;LUXVUE TECHNOLOGY CORPORATION |
发明人 |
GOLDA DARIUSZ;BIBL ANDREAS |
分类号 |
H01L29/66;H01L21/683 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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