发明名称 Micro device transfer head with silicon electrode
摘要 A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.
申请公布号 US8415771(B1) 申请公布日期 2013.04.09
申请号 US201213481592 申请日期 2012.05.25
申请人 GOLDA DARIUSZ;BIBL ANDREAS;LUXVUE TECHNOLOGY CORPORATION 发明人 GOLDA DARIUSZ;BIBL ANDREAS
分类号 H01L29/66;H01L21/683 主分类号 H01L29/66
代理机构 代理人
主权项
地址