发明名称 Spacer structure wherein carbon-containing oxide film formed within
摘要 A spacer structure contains a carbon-containing oxide film positioned on a gate sidewall and a nitride film covering the carbon-containing oxide film. The carbon-containing oxide film has low etch rate so that the spacer structure can have a good profile during etching the carbon-containing oxide film.
申请公布号 US8415723(B2) 申请公布日期 2013.04.09
申请号 US201213490482 申请日期 2012.06.07
申请人 CHENG PO-LUN;LIU CHE-HUNG;UNITED MICROELECTRONICS CORP. 发明人 CHENG PO-LUN;LIU CHE-HUNG
分类号 H01L29/76;H01L29/94 主分类号 H01L29/76
代理机构 代理人
主权项
地址