发明名称 |
Spacer structure wherein carbon-containing oxide film formed within |
摘要 |
A spacer structure contains a carbon-containing oxide film positioned on a gate sidewall and a nitride film covering the carbon-containing oxide film. The carbon-containing oxide film has low etch rate so that the spacer structure can have a good profile during etching the carbon-containing oxide film. |
申请公布号 |
US8415723(B2) |
申请公布日期 |
2013.04.09 |
申请号 |
US201213490482 |
申请日期 |
2012.06.07 |
申请人 |
CHENG PO-LUN;LIU CHE-HUNG;UNITED MICROELECTRONICS CORP. |
发明人 |
CHENG PO-LUN;LIU CHE-HUNG |
分类号 |
H01L29/76;H01L29/94 |
主分类号 |
H01L29/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|