发明名称 |
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method |
摘要 |
A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction. The p-doped emitter has a number of heavily p-doped zones having a locally increased p-type doping. |
申请公布号 |
US8415710(B2) |
申请公布日期 |
2013.04.09 |
申请号 |
US201113022386 |
申请日期 |
2011.02.07 |
申请人 |
SCHULZE HANS-JOACHIM;NIEDERNOSTHEIDE FRANZ-JOSEF;KELLNER-WERDEHAUSEN UWE;BARTHELMESS REINER;INFINEON TECHNOLOGIES AG |
发明人 |
SCHULZE HANS-JOACHIM;NIEDERNOSTHEIDE FRANZ-JOSEF;KELLNER-WERDEHAUSEN UWE;BARTHELMESS REINER |
分类号 |
H01L29/74 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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