发明名称 |
Quantum well active region with three dimensional barriers and fabrication |
摘要 |
The invention provides a quantum well active region for an optoelectronic device. The quantum well active region includes barrier layers of high bandgap material. A quantum well of low bandgap material is between the barrier layers. Three-dimensional high bandgap barriers are in the quantum well. A preferred semiconductor laser of the invention includes a quantum well active region of the invention. Cladding layers are around the quantum well active region, as well as a waveguide structure. |
申请公布号 |
US8416823(B2) |
申请公布日期 |
2013.04.09 |
申请号 |
US20080598224 |
申请日期 |
2008.04.29 |
申请人 |
COLEMAN JAMES J.;ELARDE VICTOR C.;THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS |
发明人 |
COLEMAN JAMES J.;ELARDE VICTOR C. |
分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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