发明名称 |
SELF-REFERENCE MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL COMPRISING FERRIMAGNETIC LAYERS |
摘要 |
<p>PURPOSE: A self-reference random access memory cell including a ferrimagnetic layer is provided to read and write data by using a small write field and a small read field. CONSTITUTION: A storage layer(23) includes a pure storage magnetization which is controlled from a first direction to a second direction at a high temperature critical value and is pinned at a low temperature critical value. A sensing layer(21) includes a reversible pure sensing magnetization. A tunnel barrier layer(22) separates the sensing layer from the storage layer. The storage layer and the sensing layer include ferrimagnetic 3d-4f amorphous alloy materials. The ferrimagnetic 3d-4f amorphous alloy materials include sub lattices of 3d transition metal elements to equalize a first magnetization to a second magnetization at one compensation temperature of the storage layer and the sensing layer. One of the storage layer and the sensing layer provides the first magnetization. A sub lattice of a 4f rare-earth element provides the second magnetization.</p> |
申请公布号 |
KR20130035942(A) |
申请公布日期 |
2013.04.09 |
申请号 |
KR20120108601 |
申请日期 |
2012.09.28 |
申请人 |
CROCUS TECHNOLOGY SA |
发明人 |
PREJBEANU IOAN LUCIAN;LOMBARD LUCIEN |
分类号 |
G11C11/15;H01L21/8247;H01L27/115 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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