发明名称 |
CHEMICAL VAPER DEPOSITION METHOD |
摘要 |
PURPOSE: A chemical vapor deposition method is provided to improve productivity by performing a deposition process in a process pressure condition to maintain a deposition speed over a reference deposition speed. CONSTITUTION: A deposition speed is measured in different process pressure. A deposition speed is measured according to the process pressure(ST10). The maximum deposition speed is drawn from the deposition speed according to the process pressure(ST20). A process pressure range with the deposition speed over a reference deposition speed set based on the maximum deposition speed is drawn(ST30). A deposition process is performed in the process pressure range(ST40). [Reference numerals] (ST10) Step of measuring a deposition speed according to the process pressure; (ST20) Step of drawing the maximum deposition speed; (ST30) Step of drawing a process pressure range; (ST40) Step of performing a deposition process;
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申请公布号 |
KR20130035583(A) |
申请公布日期 |
2013.04.09 |
申请号 |
KR20110099973 |
申请日期 |
2011.09.30 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
KIM, GUN HO;YOU, DONG JOO;KIM, SUN HO;LEE, SUNG EUN |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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地址 |
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