发明名称 METHOD FOR FORMING PATTERN
摘要 <p>PURPOSE: A method for forming a pattern is provided to form the pattern with high quality by preventing a substrate from being affected by a low dielectric material. CONSTITUTION: A resist bottom layer is formed on the upper side of a processed substrate. A resist pattern is formed on the upper side of the resist bottom layer. A pattern is formed on the processed substrate. The resist bottom layer is removed by basic solutions. The resist bottom layer is heated or processed with acid.</p>
申请公布号 KR20130035229(A) 申请公布日期 2013.04.08
申请号 KR20120108798 申请日期 2012.09.28
申请人 JSR CORPORATION 发明人 GOJI WAKAMATSU;HAYATO NAMAI;AOKI SHUN
分类号 H01L21/027 主分类号 H01L21/027
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