发明名称 CRYSTALLIZATION METHOD AND METHOD OF FABRICATING THIN FILM TRANSISTOR USING THEREOF
摘要 <p>PURPOSE: A crystallizing method and a method for manufacturing a thin film transistor are provided to improve the uniformity of an optical system by increasing the periodicity of a coherent length. CONSTITUTION: A homogenizer array set(160a,160b) is divided into n number of parts. A condensing lens(170) is installed on the front of the divided part. An amorphous silicon thin film is formed on a substrate. A green laser beam is scanned on the amorphous silicon thin film. The amorphous silicon thin film is crystallized to a polycrystalline silicon thin film.</p>
申请公布号 KR20130035116(A) 申请公布日期 2013.04.08
申请号 KR20110099389 申请日期 2011.09.29
申请人 LG DISPLAY CO., LTD. 发明人 KIM, SUNG KI;KIM, KI TAE;SHIN, MI HEE;SAXENA SAURABH
分类号 H01L29/786 主分类号 H01L29/786
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