发明名称 |
CRYSTALLIZATION METHOD AND METHOD OF FABRICATING THIN FILM TRANSISTOR USING THEREOF |
摘要 |
<p>PURPOSE: A crystallizing method and a method for manufacturing a thin film transistor are provided to improve the uniformity of an optical system by increasing the periodicity of a coherent length. CONSTITUTION: A homogenizer array set(160a,160b) is divided into n number of parts. A condensing lens(170) is installed on the front of the divided part. An amorphous silicon thin film is formed on a substrate. A green laser beam is scanned on the amorphous silicon thin film. The amorphous silicon thin film is crystallized to a polycrystalline silicon thin film.</p> |
申请公布号 |
KR20130035116(A) |
申请公布日期 |
2013.04.08 |
申请号 |
KR20110099389 |
申请日期 |
2011.09.29 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
KIM, SUNG KI;KIM, KI TAE;SHIN, MI HEE;SAXENA SAURABH |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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