HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A transistor with high electron mobility and a manufacturing method thereof are provided to simplify manufacturing processes by including an HEMT(High Electron Mobility transistor) laminate. CONSTITUTION: An HEMT laminate(60) is separated from a substrate(30). A PIL(Pseudo Insulation Layer)(20) is located between the substrate and the HEMT laminate. The PIL includes at least two kinds of materials. Two materials include a solid material and a non-solid material. The solid material is a semiconductor material. The non-solid material is air.