发明名称 LIGHT EMITTING DEVICE
摘要 PURPOSE: A light emitting device is provided to improve epitaxial quality by reducing an internal field due to a polarization difference between a quantum layer and an electron blocking layer. CONSTITUTION: An active layer(131) is arranged on a first conductive semiconductor layer(121). The active layer includes a quantum well layer and a plurality of quantum barrier layers. A second conductive semiconductor layer(147) is arranged on an electron blocking layer(145). A second conductive buffer layer(141) is arranged between the active layer and the electron blocking layer. A dopant layer(143) is arranged between the second conductive buffer layer and the electron blocking layer.
申请公布号 KR20130035075(A) 申请公布日期 2013.04.08
申请号 KR20110099336 申请日期 2011.09.29
申请人 LG INNOTEK CO., LTD. 发明人 HAN, DAE SEOB;MOON, YONG TAE
分类号 H01L33/04;H01L33/12;H01L33/14 主分类号 H01L33/04
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