| 摘要 |
PURPOSE: An oxide thin film transistor and a manufacturing method thereof are provided to improve mobility of a channel layer by forming an ion implantation region in the channel layer consisting of an oxide semiconductor. CONSTITUTION: A gate(110) is formed on a substrate(100). A gate insulating layer(120) is formed in order to cover a top surface and a side of the gate. The gate insulating layer is comprised of material which electrically can insulate the gate. A channel layer(130) is located on the same line with the gate at the top of the gate insulating layer. A source(150) and a drain(160) are separately formed on the upper side of both edges of the gate insulating layer. |
