| 摘要 |
PURPOSE: A compound semiconductor device and a manufacturing method thereof are provided to form an In-based nitride semiconductor layer on an electron driving layer and to secure a normally-off operation and to prevent current collapse. CONSTITUTION: A compound semiconductor stacked structure(7) is formed on a substrate(1). The compound semiconductor stacked structure comprises an electron driving layer(3), a spacer layer(4), an electron layer(5), and an In-containing layer(6). An element isolation region(20) is formed in the compound semiconductor stacked structure. A gate electrode(11g), a source electrode(11s), and a drain electrode(11d) are formed on the compound semiconductor stacked structure. An insulating layer(12) covers the source electrode and the drain electrode. An opening part(13g) is formed between the source electrode and the drain electrode. [Reference numerals] (1) Substrate; (11d) Drain electrode; (11g) Gate electrode; (11s) Source electrode; (12,14) Insulating layer; (13g) Opening part; (20) Element isolation region; (2a) Initial layer; (2b) Buffer layer; (3) Electron driving layer; (4) Spacer layer; (5) Electron supply layer; (6) In-containing layer; (6a) In-eliminated region; (7) Compound semiconductor stacked structure;
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