| 摘要 |
Disclosed is a novel Mo alloy thin film interconnect which does not cause warpage of a substrate upon the formation of a film on the substrate even when the substrate has a large size, and has low resistivity and excellent heat resistance, corrosion resistance and adhesion to a substrate. Specifically disclosed is a thin film interconnect for an electronic component, which comprises a substrate and a metal film formed on the substrate. The metal film contains additive elements other than Mo, with the remainder being Mo and unavoidable impurities. In the metal film, Nb and W are contained as the additive elements in amounts of 2 to 15 at.% and 2 to 20 at.%, respectively, and in a total amount of 30 at.% or less relative to the total amount (100 at.%) of Mo and the additive elements. |
