| 摘要 |
<p>The invention relates to a preparation process for thin semiconducting inorganic films comprising various metals (Cu/In/Zn/Ga/Sn), selenium and/or sulfur. The process uses molecular precursors comprising metal complexes with oximato ligands. Copper-based chalcopyrites of the I-III-IV2-type are prepared with high purity at low temperatures under ambient conditions. The thin films can be used in photovoltaic panels (solar cells).</p> |
