发明名称 |
OVERCHARGE PREVENTING CIRCUIT AND SEMICONDUCTOR DEVICE |
摘要 |
<p>PURPOSE: An overcharge preventing circuit and a semiconductor device are provided to discharge current by using a clamp transistor and an overcharge protection switch in overcharging detection, and to clamping the voltage of a power generation unit with the voltage of a charge storage unit. CONSTITUTION: The negative terminal and the positive terminal of a solar cell(11) are connected to a low potential power source(VSS) and a power generation source(VSOL). The negative terminal and the positive terminal of a secondary battery(12) are connected to the low potential power and a battery power source(VBAT). An overcharging detection circuit(14) is operated between the battery power source and the low potential power source. The source terminal of an NMOS transistor(15) and a back gate terminal are connected to the low potential power source. The gate terminal of a PMOS transistor(16) is connected to the cathode terminal of a diode(13) and the battery power source. [Reference numerals] (14) Overcharging detection circuit;</p> |
申请公布号 |
KR20130034602(A) |
申请公布日期 |
2013.04.05 |
申请号 |
KR20120105727 |
申请日期 |
2012.09.24 |
申请人 |
SEIKO INSTRU KABUSHIKI KAISHA, ALSO TRADING AS SEIKO INSTRUMENTS INC. |
发明人 |
MITANI MAKOTO;WATANABE KOTARO |
分类号 |
H02J7/35;H01M10/44 |
主分类号 |
H02J7/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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