发明名称 OVERCHARGE PREVENTING CIRCUIT AND SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE: An overcharge preventing circuit and a semiconductor device are provided to discharge current by using a clamp transistor and an overcharge protection switch in overcharging detection, and to clamping the voltage of a power generation unit with the voltage of a charge storage unit. CONSTITUTION: The negative terminal and the positive terminal of a solar cell(11) are connected to a low potential power source(VSS) and a power generation source(VSOL). The negative terminal and the positive terminal of a secondary battery(12) are connected to the low potential power and a battery power source(VBAT). An overcharging detection circuit(14) is operated between the battery power source and the low potential power source. The source terminal of an NMOS transistor(15) and a back gate terminal are connected to the low potential power source. The gate terminal of a PMOS transistor(16) is connected to the cathode terminal of a diode(13) and the battery power source. [Reference numerals] (14) Overcharging detection circuit;</p>
申请公布号 KR20130034602(A) 申请公布日期 2013.04.05
申请号 KR20120105727 申请日期 2012.09.24
申请人 SEIKO INSTRU KABUSHIKI KAISHA, ALSO TRADING AS SEIKO INSTRUMENTS INC. 发明人 MITANI MAKOTO;WATANABE KOTARO
分类号 H02J7/35;H01M10/44 主分类号 H02J7/35
代理机构 代理人
主权项
地址