| 摘要 |
PURPOSE: A semiconductor memory device is provided to reduce a layout of a word line driving circuit by not using a self-boosting voltage in a charge pump. CONSTITUTION: A word line decoder(120) selects a fixed memory block of a memory array and outputs a selection signal to the selected memory block. A word line driving circuit(130) is arranged between the memory arrays and includes a switch circuit and a pump circuit. The switch circuit switches the application of an operation voltage to a memory cell according to the selection signal. The pump circuit raises a voltage level of the selection signal. The word line decoder includes lines to transmit the selection signal. The lines are connected to the switch circuit of the word line driving circuit. [Reference numerals] (100) Flash memory; (110A,110B) Memory array; (120) Word line decoder; (130) Word line driving circuit; (140) Page buffer;
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