发明名称 |
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME |
摘要 |
A nitride semiconductor device and a method to produce the same are disclosed. The method includes steps of sequentially growing a channel layer and a first layer with bandgap energy Eg greater than that of channel layer; forming a gate replica on the first layer; selectively growing a second layer with Eg also greater than or equal to Eg of the channel layer; removing the gate replica to form a recess in the second layer; and forming the gate electrode in the recess and onto the first layer.
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申请公布号 |
US2013082278(A1) |
申请公布日期 |
2013.04.04 |
申请号 |
US201213630666 |
申请日期 |
2012.09.28 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MIZUNO SHINYA |
分类号 |
H01L21/205;H01L29/20 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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