| 摘要 |
The invention provides a method for estimating oxide semiconductor thin films and a method for managing the quality of oxide semiconductor thin films. The methods are applied for estimating and determining the electrical performances of the oxide semiconductor thin films in a non-contact and electrode-free way. The method comprises the steps of irradiating exciting light and microwave on samples equipped with oxide semiconductor thin films; stopping the irradiation of the exciting light after achieving the maximum value of the reflecting wave of the microwave from the oxide semiconductor thin film which is changed due to the irradiation of the exciting light; detecting the change of the reflectivity of the reflecting wave of the microwave from the oxide semiconductor thin film after the irradiation of the exciting light is stopped; and determining the mobility of the oxide semiconductor thin film according to the calculated service lifetime value derived from the detected value. |
