| 摘要 |
PURPOSE: A heat treating method of a silicon wafer is provided to improve the surface uniformity of a BMD size and to reduce the COP of the superficial part of a wafer. CONSTITUTION: A sliced silicon wafer of a silicon ingot is heated to a first highest temperature in the range of 1325-1400>= and is quenched with the cooling speed of 50>=/sec-250>=/sec. The silicon wafer is heated to a second highest temperature in the range of 900-1250>= and is quenched. The heating rate of the second highest temperature is 1>=/min-5>=/min. [Reference numerals] (AA) Wafer surface; (BB,HH,JJ) Surface part; (CC,II,KK) Bulk part; (DD,FF) BMD nuclei; (EE) Inner wall oxide film; (GG) Void;
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