发明名称 |
TUNABLE ESD PROTECTION DEVICE |
摘要 |
The present disclosure provides an ESD protection device. The device contains a bipolar junction transistor device that includes a collector, a base, and an emitter. The collector includes a first doped element and a more heavily doped second doped element disposed over the first doped element. The first and second doped elements each have a first doping polarity. The base is located adjacent to the collector and includes a third doped element having a second doping polarity different from the first doping polarity. A p-n junction is formed between the third doped element and one of the first and second doped elements. The emitter is formed over the base. The emitter includes a fourth doped element having the first doping polarity and forming a p-n junction with the third doped element. The fourth doped element is more heavily doped than the third doped element.
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申请公布号 |
US2013082353(A1) |
申请公布日期 |
2013.04.04 |
申请号 |
US201213469923 |
申请日期 |
2012.05.11 |
申请人 |
KUO HSI-YU;CHEN CHI-KUANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
KUO HSI-YU;CHEN CHI-KUANG |
分类号 |
H01L29/73 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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