发明名称 GATE DRIVE CIRCUIT
摘要 <p>Provided is a gate drive circuit capable of reducing the effects of switching noise and common mode noise on a gate drive signal, the switching noise being generated when an IGBT is turned on and off. The gate drive circuit is electrically isolated by a pulse transformer (T) into a primary side and a secondary side and outputs a gate drive signal induced in the secondary winding (N2) of the pulse transformer (T) through a receiver (CMP) equipped with impedance matching resistors (R1 to R4) on the input side, the primary side of the pulse transformer (T) being connected to a first ground voltage level point (GND1), the secondary side of the pulse transformer (T) being connected to a second ground voltage level point (GND2) electrically isolated from the first ground voltage level point (GND1). In the gate drive circuit, an electrostatic shield plate (5) is equipped between the primary winding (N1) and secondary winding (N2) of the pulse transformer and is grounded to the second ground voltage level point (GND2).</p>
申请公布号 WO2013047476(A1) 申请公布日期 2013.04.04
申请号 WO2012JP74481 申请日期 2012.09.25
申请人 SANKEN ELECTRIC CO.,LTD.;TAJIMA, KAZUNAO;ASUKE, HIDEKI 发明人 TAJIMA, KAZUNAO;ASUKE, HIDEKI
分类号 H02M1/08;H01F27/36;H03K17/16 主分类号 H02M1/08
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