| 摘要 |
<p>The purpose of the present invention is to provide a semiconductor device that has high voltage and high reliability, without forming an embedded injection layer with high positional accuracy. This semiconductor device is provided with: a base (2), which is formed on a semiconductor surface layer of a first conductivity type, and serves as an active region of a second conductivity type constituting a semiconductor element; guard rings (11 to 16), which are formed on the semiconductor surface layer apart from each other in such a manner that each guard ring surrounds the base (2) in a plan view, and serve as a plurality of first impurity regions of the second conductivity type; and an embedded injection layer (18), which is embedded in the semiconductor surface layer, connects at least two of the bottom sections of the plurality of guard rings (11 to 16), and serves as second impurity region of the second conductivity type.</p> |
