| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having high brightness and a method of fabricating the same. <P>SOLUTION: The semiconductor device includes a first type nitride-based cladding layer 30 formed on a growth substrate 130 having an insulating property, a multi quantum well nitride-based active layer 40 formed on the first type nitride-based cladding layer, and a second type nitride-based cladding layer 50, which is different from the first type and is formed on the multi quantum well nitride-based active layer. A tunnel junction layer 60, 70 is formed under the first type nitride-based cladding layer and/or over the second type nitride-based cladding layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
