| 摘要 |
A first embodiment is a method for semiconductor processing. The method comprises forming a component on a wafer in a chamber; determining a non-uniformity of the plasma in the chamber, the determining being based at least in part on the component on the wafer; and providing a material on a surface of the chamber corresponding to the non-uniformity. The forming the component includes using a plasma. The material can have various shapes, compositions, thicknesses, and/or placements on the surface of the chamber. Other embodiments include a chamber having a material on a surface to control a plasma uniformity.
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