发明名称 |
METHOD OF FORMING RESIST PATTERN |
摘要 |
PURPOSE: A method for forming a resist pattern is provided to form a negative type pattern for high resolution. CONSTITUTION: A resist composite is coated on a supporter(1) to form a resist film(2). The resist film is exposed by using a photomask(3) having a pattern. A post exposure bake is performed to make a difference of the dissolution velocity in developing solution between an exposure part(2a) and a non-exposure part(2b). The resist film is developed by using the alkaline developing solution to form a negative type resist pattern. |
申请公布号 |
KR20130033975(A) |
申请公布日期 |
2013.04.04 |
申请号 |
KR20120106519 |
申请日期 |
2012.09.25 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
NITO HIDETO;NAKAMURA TSUYOSHI;SHIMIZU HIROAKI;YOKOYA JIRO |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|