发明名称 METHOD OF FORMING RESIST PATTERN
摘要 PURPOSE: A method for forming a resist pattern is provided to form a negative type pattern for high resolution. CONSTITUTION: A resist composite is coated on a supporter(1) to form a resist film(2). The resist film is exposed by using a photomask(3) having a pattern. A post exposure bake is performed to make a difference of the dissolution velocity in developing solution between an exposure part(2a) and a non-exposure part(2b). The resist film is developed by using the alkaline developing solution to form a negative type resist pattern.
申请公布号 KR20130033975(A) 申请公布日期 2013.04.04
申请号 KR20120106519 申请日期 2012.09.25
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 NITO HIDETO;NAKAMURA TSUYOSHI;SHIMIZU HIROAKI;YOKOYA JIRO
分类号 H01L21/027 主分类号 H01L21/027
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