| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a SiC crystal with a diameter of more than 4 inches which can be utilized as a semiconductor substrate. <P>SOLUTION: This invention relates to the method for manufacturing the silicon carbide crystal, including the steps of: placing a seed substrate and a source material for the silicon carbide crystal within a growth container; and growing the silicon carbide crystal with a diameter of more than 4 inches on a surface of the seed substrate by a sublimation method. In the step of growing, a pressure within the growth container is changed from a predetermined pressure, at a predetermined change rate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
