发明名称 |
COMBINED SILICON OXIDE ETCH AND CONTAMINATION REMOVAL PROCESS |
摘要 |
A method of forming a semiconductor device. A substrate having first and second materials is provided, wherein the second material is occluded by the first material. The substrate is etched using a first non-plasma etch process that etches the first material at a higher rate relative to a rate of etching the second material. The first non-plasma etch process exposes the second material that is overlying at least a portion of the first material. The second material is then etched using a plasma containing a reactive gas, which exposes the at least a portion of the first material. The first material including the at least a portion of the first material that was exposed by etching the second material are etched using a second non-plasma etch process.
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申请公布号 |
US2013084654(A1) |
申请公布日期 |
2013.04.04 |
申请号 |
US201113250960 |
申请日期 |
2011.09.30 |
申请人 |
GAYLORD RICHARD H.;MESSER BLAZE J.;KUMAR KAUSHIK A.;TOKYO ELECTRON LIMITED |
发明人 |
GAYLORD RICHARD H.;MESSER BLAZE J.;KUMAR KAUSHIK A. |
分类号 |
H01L21/66;H01L21/3065 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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